? ? ? ? guilin guilin guilin guilin strong strong strong strong micro-electronics micro-electronics micro-electronics micro-electronics co.,ltd. co.,ltd. co.,ltd. co.,ltd. gm 7002 sot-23 w (sot-23 field effect transistors) n n n n -channel -channel -channel -channel enhancement-mode enhancement-mode enhancement-mode enhancement-mode mos mos mos mos fets fets fets fets n n n n ? mos mos mos mos ? maximum maximum maximum maximum ratings ratings ratings ratings ~? thermal thermal thermal thermal characteristics characteristics characteristics characteristics characteristic ? symbol ? max ? unit drain - source voltage ? O - ? O? b v dss 60 v gate - source voltage ? O - ? O? v gs + 2 0 v drain current (continuous) ? O - Bm i dr 115 ma drain current (pulsed) ? O - i drm 8 00 ma characteristic symbol ? max ? unit total device dissipation ? t a = 25 h?? 25 derate above25 ^ 25 fp p d 225 1.8 mw mw/ thermal resistance junction to ambient r ja 417 /w junct io n and storage temperature Y??? t j , t stg 150 , -55to+150
? ? ? ? guilin guilin guilin guilin strong strong strong strong micro-electronics micro-electronics micro-electronics micro-electronics co.,ltd. co.,ltd. co.,ltd. co.,ltd. gm 700 2 device device device device marking marking marking marking electrical electrical electrical electrical characteristics characteristics characteristics characteristics (t a =25 unless otherwise noted of?? 25 ) 1. fr-5=1.0 0.75 0.062in. 2. alumina=0.4 0.3 0.024in.99.5%alumina. 3. pulse width < 300 s; duty cycle < 2.0%. gm gm gm gm 7002 7002 7002 7002 = = = = 7002 7002 7002 7002 characteristic ? symbol ? min ? typ ? max ? unit drain - source breakdown voltage ? O - ? O? ( i d = 25 0 u a, v gs =0 v ) b v dss 6 0 v gate threshold voltage ? O _ ? ( i d = 25 0 u a, v gs = v ds ) v gs ( th ) 1. 0 2.5 v drain - source o n voltage ? O - ? O?? ( i d = 5 0 m a, v gs = 5v ) ( i d = 500m a, v gs = 1 0 v ) v ds ( on ) 0.375 3.75 v diode forward voltage drop ? O ( i sd = 200m a, v gs =0 v ) v sd 1 . 5 v zero gate voltage drain current ? ? O (v gs = 0 v, v ds = b v dss ) (v gs = 0 v, v ds = 0.8b v dss , t a = 12 5 ) i dss 1 500 u a gate body leakage ? O ? (v gs = + 20 v, v ds = 0 v) i gss + 100 n a static drain-source on-state resistance ??? ? ( i d = 5 0 m a, v gs = 5v ) ( i d = 50 0 m a, v gs = 10v ) r ds ( on ) 7.5 7.5 input capacitance ? (v gs = 0 v, v ds = 25 v, f=1 mhz) c iss 50 pf common source output capacitance ? ? (v gs = 0 v, v ds = 25 v, f=1 mhz) c oss 25 pf turn-on time rg (v ds = 30 v, i d = 200ma , r gen = 25 ) t (on) 20 ns turn-off time ? rg (v ds = 30 v, i d = 200ma , r gen = 25 ) t (off) 40 ns reverse recovery time ? rg ( i sd = 800ma , v gs =0v) t rr 400 ns
? ? ? ? guilin guilin guilin guilin strong strong strong strong micro-electronics micro-electronics micro-electronics micro-electronics co.,ltd. co.,ltd. co.,ltd. co.,ltd. gm 7002 dimension dimension dimension dimension b?
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